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cystech electronics corp. spec. no. : c434fp issued date : 2013.10.14 revised date : page no. : 1/ 8 MTN2572FP cystek product specification n-channel enhancement mode power mosfet MTN2572FP features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? insulating package, front/back side insulating voltage=2500v(ac) ? rohs compliant package symbol outline ordering information device package shipping MTN2572FP-0-ub-s to-220fp (rohs compliant package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton to-220fp g d s bv dss 150v i d 48a r ds(on) @v gs =10v, i d =20a 34 m (typ) r ds(on) @v gs =6v, i d =10a 38m (typ) MTN2572FP g gate d drain s source environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, ub : 50 pcs / tube, 20 tubes/box product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c434fp issued date : 2013.10.14 revised date : page no. : 2/ 8 MTN2572FP cystek product specification absolute maximum ratings (t c =25 c) parameter symbol limits unit drain-source voltage (note 1) v ds 150 gate-source voltage v gs 30 v continuous drain current @t c =25 c, v gs =10v (note 1) 48* continuous drain current @t c =100c, v gs =10v (note 1) i d 34* continuous drain current @t a =25 c, v gs =10v (note 2) 6.6 continuous drain current @t a =70 c, v gs =10v (note 2) i dsm 5.5 pulsed drain current @ v gs =10v (note 3) i dm 140* avalanche current (note 3) i ar 18 a single pulse avalanche energy @ l=0.2mh, i d =18 amps, v dd =50v (note 2) e as 32.4 repetitive avalanche energy (note 3) e ar 16.2 mj t c =25 c (note 1) 125 t c =100c (note 1) p d 62.5 t a =25 c (note 2) 2 power dissipation t a =70 c (note 2) p dsm 1.3 w maximum temperature for solder ing @ lead at 0.063 in(1.6mm) from case for 10 seconds t l 300 maximum temperature for soldering @ package body for 10 seconds t pkg 260 operating junction and storage temperature tj, tstg -55~+175 c *drain current limited by maximum junction temperature thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 1.2 c/w thermal resistance, junction-to-ambient, max (note 2) r ja 62.5 c/w note : 1 . the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation pdsm is based on r ja and the maximum allowed junction temperature of 150 c c. the value in any given application depend s on the user?s specific board design, and the maximum temperature of 175 c c may be used if the pcb allows it. 3 . repetitive rating, pulse width limited by junction temperature t j(max) =175 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c c. cystech electronics corp. spec. no. : c434fp issued date : 2013.10.14 revised date : page no. : 3/ 8 MTN2572FP cystek product specification characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 150 - - v v gs =0v, i d =250 a ? bv dss / ? tj - 0.1 - v/ c reference to 25c, i d =250 a v gs(th) 2.0 3.6 4.0 v v ds = v gs , i d =250 a *g fs - 30 - s v ds =5v, i d =20a i gss - - d 100 na v gs = d 30v i dss - - 1 v ds =120v, v gs =0v i dss - - 25 a v ds =120v, v gs =0v, tj=125 c - 34 45 v gs =10v, i d =20a *r ds(on) - 38 50 m v gs =6v, i d =10a dynamic *qg - 30 - *qgs - 10 - *qgd - 8 - nc i d =20a, v ds =80v, v gs =10v *t d(on) - 13 - *tr - 12 - *t d(off) - 47 - *t f - 20 - ns v ds =75v, i d =1a, v gs =10v, r g =6 ciss - 2249 - coss - 225 - crss - 118 - pf v gs =0v, v ds =25v, f=1mhz rg - 2 - v gs =15mv, v ds =0v, f=1mhz source-drain diode *i s - - 48 *i sm - - 140 a *v sd - 0.79 1.3 v i s =12a, v gs =0v *trr - 125 - ns *qrr - 385 - nc v gs =0, i f =25a, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% cystech electronics corp. spec. no. : c434fp issued date : 2013.10.14 revised date : page no. : 4/ 8 MTN2572FP cystek product specification typical characteristics typical output characteristics 0 20 40 60 80 100 0246810 v ds , drain-source voltage(v) i d , drain current(a) 10v, 9v, 8v, 7v, 6v v gs =5v v gs =4 v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v 5v 6v 7v 8v 9v 10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 04812162 0 0 tj=25c tj=150c drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =20a r ds( on) @ tj=25c : 33.7m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =20a cystech electronics corp. spec. no. : c434fp issued date : 2013.10.14 revised date : page no. : 5/ 8 MTN2572FP cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss normalizedthreshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 total gate charge---qg(nc) v gs , gate-source voltage(v) v ds =80v i d =20a maximum safe operating area 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s 10 s r ds( on) limit t c =25c, tj=175, v gs =10v r jc =1.2c/w, single pulse maximum drain current vs case temperature 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175 200 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =1.2c/w cystech electronics corp. spec. no. : c434fp issued date : 2013.10.14 revised date : page no. : 6/ 8 MTN2572FP cystek product specification typical characteristics(cont.) typical transfer characteristics 0 20 40 60 80 100 012345678 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse maximum power dissipation 0 500 1000 1500 2000 2500 3000 0.0001 0.001 0.01 0.1 1 10 pulse width(s) power (w) t j(max) =175c t c =25c jc =1.2c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =1.2c/w cystech electronics corp. spec. no. : c434fp issued date : 2013.10.14 revised date : page no. : 7/ 8 MTN2572FP cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface. cystech electronics corp. spec. no. : c434fp issued date : 2013.10.14 revised date : page no. : 8/ 8 MTN2572FP cystek product specification to-220fp dimension *typical inches millimeters inches millimeters dim min. max. min. max. style: pin 1.gate 2.drain 3.source 3-lead to-220fp plastic package cystek package code: fp marking: date code device name 2572 dim min. max. min. max. a 0.171 0.183 4.35 4.65 g 0.246 0.258 6.25 6.55 a1 0.051 ref 1.300 ref h 0.138 ref 3.50 ref a2 0.112 0.124 2.85 3.15 h1 0.055 ref 1.40 ref a3 0.102 0.110 2.60 2.80 h2 0.256 0.272 6.50 6.90 b 0.020 0.030 0.50 0.75 j 0.031 ref 0.80 ref b1 0.031 0.041 0.80 1.05 k 0.020 0.50 ref b2 0.047 ref 1.20 ref l 1.102 1.118 28.00 28.40 c 0.020 0.030 0.500 0.750 l1 0.043 0.051 1.10 1.30 d 0.396 0.404 10.06 10.26 l2 0.036 0.043 0.92 1.08 e 0.583 0.598 14.80 15.20 m 0.067 ref 1.70 ref e 0.100 * 2.54* n 0.012 ref 0.30 ref f 0.106 ref 2.70 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . |
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